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Elixir DDR3-1333 PC3-10660 4GB, Unbuffered Memory M2F4G64CB8HB5N

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Information

Item ID

281176

Item Number

C-EL1333-4GB

Manufacturer Part No

M2F4G64CB8HB5N

UPC/EAN Number

Our Stock **

Price

$24.20

Quantity

QR 2D barcode
Product link	.: No link
Manufacturer's link	.: Elixir
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** This is the stock level in our warehouse.
** Please check Stock Information below for out of stock items.

Stock Information

	Our Qty in Stock	Availability and ETA
Our own stock	5+

Features

Elixir DDR3-1333 PC3-10660 4GB, Unbuffered Memory Based on DDR3-1066/1333/1600 256Mx8 (2GB/4GB) SDRAM B-Die Features

•performance:
Speed Sort PC3-8500 PC3-10600 PC3-12800 Unit -BE -CG -DI DIMM CAS Latency 7 9 11 fck – Clock Frequency 533 667 800 MHz tck – Clock Cycle 1.875 1.5 1.25 ns fDQ – DQ Burst Frequency 1066 1333 1600 Mbps • 240-Pin Dual In-Line Memory Module (UDIMM) • 256Mx64 (2GB) / 512Mx64 (4GB) DDR3 Unbuffered DIMM based on 256Mx8 DDR3 SDRAM B-Die devices. • Intended for 533MHz/667MHz/800MHz applications • Inputs and outputs are SSTL-15 compatible • VDD = VDDQ = 1.5V ±0.075V • SDRAMs have 8 internal banks for concurrent operation • Differential clock inputs • Data is read or written on both clock edges • DRAM DLL aligns DQ and DQS transitions with clock transitions. • Address and control signals are fully synchronous to positive clock edge • Nominal and Dynamtic On-Die Termination support • Halogen free product

• Programmable Operation:

- Dimm ρ�ρ�ρ� Latency: 6,7,8,9,10,11

- Burst Type: Sequential or Interleave

- Burst Length: BC4, BL8

- Operation:
Burst Read and Write
• Two different termination values (Rtt_Nom & Rtt_WR)
• 15/10/1 (row/column/rank) Addressing for 2GB
• 15/10/2 (row/column/rank) Addressing for 4GB
• Extended operating temperature rage
• Auto Self-Refresh option
• Serial Presence Detect
• Gold contacts
• 2GB/4GB SDRAMs are in 78-ball BGA Package
• RoHS compliance and Halogen free
Description
M2F2G64CB88B7N / M2F4G64CB8HB5N / M2F2G64CB88BHN / M2F4G64CB8HB9N are 240-Pin Double Data Rate 3 (DDR3) Synchronous DRAM Unbuffered Dual In-Line Memory Module (UDIMM), organized as one rank of 256Mx64 (2GB) and two ranks of 512Mx64 (4GB) high-speed memory array. Modules use eight 256Mx8 (2GB) 78-ball BGA packaged devices and sixteen 256Mx8 (4GB) 78-ball BGA packaged devices. These DIMMs are manufactured using raw cards developed for broad industry use as reference designs. The use of these common design files minimizes electrical variation between suppliers. All Elixir DDR3 SDRAM DIMMs provide a high-performance, flexible 8-byte interface in a 5.25” long space-saving footprint. The DIMM is intended for use in applications operating of 533MHz/667MHz/800MHz clock speeds and achieves high-speed data transfer rates of 1066Mbps/1333Mbps/1600Mbps. Prior to any access operation, the device  latency and burst/length/operation type must be programmed into the DIMM by address inputs A0-A14 (2GB/4GB) and I/O inputs BA0~BA2 using the mode register set cycle. The DIMM uses serial presence-detect implemented via a serial EEPROM using a standard IIC protocol. The first 128 bytes of SPD data are programmed and locked during module assembly. The remaining 128 bytes are available for use by the customer.

m2f4g64cb8hb5n clock dimm operation memory

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